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Ubushushu obuphezulu obuGqibelekayo beSilicon Carbide SSIC Izangqa zamaRings

Inkcazelo emfutshane:


Iinkcukacha zeMveliso

FAQ

Iithegi zeMveliso

Ingcaciso yeMveliso

Iinkcukacha zokuPakisha:Igqitywe kakuhle kwaye ipakishwe kwiibhokisi zekhadibhodi.

Izibuko:Chengdu

Umzekelo woMfanekiso:

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Ixesha lokukhokhela:

Ubuninzi (Amaqhekeza) 1 - 1000 >1000
Est.Ixesha (iintsuku) 25 Kuya kuthethathethwana

Iikristale ze-silicon carbide zineepropathi ezinjengokuqina okuphezulu, ubushushu obuphezulu, ukuxhathisa ukunxiba, ukuhanjiswa kwe-thermal kunye nokuhanjiswa okuhle phantsi kokuphindaphindwa okuphezulu.

Isetyenziswa kakhulu kwi-aerospace, i-semiconductors kunye ne-valve seal.Iingcali zikholelwa ukuba sibalekela "kwixesha le-silicon carbide."

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IiNkcazo zeMveliso

Ipharamitha Imilinganiselo I-RB SiC

 

I-SSiC

 

SSIC+C
Ukuxinana g/cm3 3.03 3.08~3.15 2.95~3.05
I-Porosity ebonakalisiweyo % ≤1% ≤1% ≤1%
Ubungakanani beCrystal μm ≤10 ≤10 ≤10
Ukuqina Rockwell 90 ≥92 92
Amandla acinezelayo MPa 3000 3000 ≥2200
Amandla anqamlezileyo MPa 350 400 200
Ubushushu obuphezulu °C 1200 1600 1500
Imodyuli ye-Elastic GPA 350 400 250
I-Thermal Conductivity W/m*K 30-130 30-130 30-130
I-Coefficient ye-Thermal 1x10-6/ 4~5 4~5 4~5

FAQ

Q1: Ngaba unokwenza imisesane ngokweplani yethu?
A1:EWE SIYAKWAZI!

I-Q2: Unokusihambisa ixesha elingakanani iimpahla zethu?
I-A2: Ngeentsuku ze-25 ukuba ubungakanani bomyalelo wakho<1000.

Q3: Yimalini indleko yokuhambisa?
I-A3: Ixabiso lethu ligubungela iindleko zokuthumela kwi-port, iindleko zokuthumela kumazwe ngamazwe yi-TBD apho ukhona.

I-Q4: I-odolo yam ikhawuleza kakhulu, leliphi elona xesha likhawulezayo onokulihambisa?
A4: Malunga neentsuku ezili-15, unokuhlawula umrhumo owongezelelweyo ukusika emgceni.Umthengi wethu ixesha elide unokwenza i-5 ~ 10% i-odolo njengeNgxamisekileyo, ngaphandle kwentlawulo.


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